Semiconductor device and method of manufacturing thereof

ABSTRACT

A silicon nitride film having a thickness of 3 nm or less is formed on the surfaces of a P-well and N-well, as well as on the upper and side surfaces of a gate electrode, in which the silicon nitride film can be formed, for example, by exposing the surface of the P-well and N-well, and the upper and side surfaces of the gate electrode to a nitrogen-gas-containing plasma using a magnetron RIE apparatus. Then, pocket layers, extension layers and source/drain layers are formed while leaving the silicon nitride film unremoved.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2002-167637, filed on Jun. 7,2002, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device suitable forcomposing CMOS (complementary metal-oxide semiconductor) and a method ofmanufacturing thereof.

2. Description of the Related Art

General procedures for manufacturing conventional CMOS transistor are asfollows. FIGS. 15A through 17C are schematic sectional views seriallyshowing process steps of a conventional method of manufacturing a CMOStransistor.

First as shown in FIG. 15A, an element isolation region 4 is formed inthe surficial portion of a P-type semiconductor substrate 1, and wellsare then formed in the device forming areas partitioned by the elementisolation region 4, where a P-well 2 is formed in an N-channel MOS(NMOS) area, and an N-well 3 is formed in a P-channel MOS (PMOS) area.

Next as shown in FIG. 15B, an insulating film and a polysilicon film areformed on the semiconductor substrate 1, and then patterned to therebyform gate insulating films 5 and gate electrodes 6, respectively, in thedevice forming areas.

Next as shown in FIG. 15C, a resist film 21 is formed so as to cover thePMOS area and to expose the NMOS area. Using the resist film 21 and gateelectrode 6 together as a mask, arsenic is ion-implanted at a highconcentration to thereby form extension layers 11 in the P-well 2, andthen boron or indium is ion-implanted to thereby form pocket layers 9deeper in the P-well 2. Ion implantation of boron or indium herein iscarried out from a direction normal to or declined away from the surfaceof the semiconductor substrate 1.

Next as shown in FIG. 16A, the resist film 21 is removed, and a resistfilm 22 is formed so as to cover the NMOS area and to expose the PMOSarea. Using the resist film 22 and gate electrode 6 together as a mask,boron is ion-implanted at a high concentration to thereby form extensionlayers 12 in the N-well 3, and then arsenic is ion-implanted to therebyform pocket layers 10 deeper in the N-well 3. Ion implantation ofarsenic herein is carried out from a direction normal to or declinedaway from the surface of the semiconductor substrate 1.

Next as shown in FIG. 16B, the resist film 22 is removed, an insulatingfilm is formed over the entire surface, and the film is thenanisotropically etched so as to leave a portion of such film only on theside surfaces of the gate electrodes 6, to thereby form side walls 13.

Next as shown in FIG. 16C, a resist film 25 is formed on thesemiconductor substrate 1 so as to cover the PMOS area and to expose theNMOS area. Using the resist film 25, gate electrode 6 and side walls 13together as a mask, arsenic is ion-implanted at a high concentration tothereby form deep source/drain diffusion regions 14.

Next as shown in FIG. 17A, the resist film 25 is removed, and a resistfilm 26 is formed on the semiconductor substrate 1 so as to cover theNMOS area and to expose the PMOS area. Using the resist film 26, gateelectrode 6 and side walls 13 together as a mask, boron is ion-implantedat a high concentration to thereby form deep source/drain diffusionregions 15.

Then as shown in FIG. 17B, the resist film 26 is removed, and a silicidelayer, which is typically a cobalt silicide layer 16, is then formed onthe gate electrodes 6 and source/drain diffusion regions 14 and 15.

This process successfully yields a CMOS transistor.

The foregoing process however suffers from a drawback such that theresist films 21, 22 used as the masks when the pocket layers andextension layers are formed must be removed after these layers areformed, where ashing or wet treatment required for removing the resistfilms 21, 22 inevitably oxidizes the silicon substrate. Oxidation of thesilicon substrate results in loss of the implanted impurities, whichfails in attaining an expected concentration and profile. Oxidation ofthe silicon substrate is also disadvantageous in that making theextension layers distant from the gate portion to thereby substantiallydeepen junction of the extension layers. This undesirably causesdegradation of the characteristics, which is typified by short-channeleffect.

Another disadvantage of the above-described manufacturing method relatesto annealing which is necessary for activating impurities in thesource/drain region 15 after the formation thereof, where the annealingundesirably promotes outward diffusion of impurities which reside in thechannel to thereby cause depletion of the channel, or undesirablypromotes outward diffusion of impurities which reside in thesource/drain diffusion region 15.

There is known a technique for suppressing the outward diffusion, whichis an oxide film capping based on RTO (rapid thermal oxidation). Anotherknown technique relates to formation of an outward diffusion preventivefilm, which is typified by a nitride film having a thickness of 100 nmor around formed by CVD process. The oxide film capping, however,suffers from a drawback such that profile of the source/drain diffusionlayer becomes deeper due to accelerated diffusion induced by oxygen. Onthe other hand, formation of the nitride film having a thickness of 100nm or around on the side surfaces of the gate electrode by the CVDprocess tends to result in increased stress and abnormal diffusion.

SUMMARY OF THE INVENTION

In consideration of the foregoing problems, it is therefore an object ofthe present invention to provide a semiconductor device and a method ofmanufacturing thereof, which are aimed at achieving excellentcharacteristics, such as low extension resistivity, by preventingoxidation of the semiconductor substrate possibly proceeds duringremoval of the resist film, and by preventing outward diffusion of theimpurities during annealing.

After extensive investigations, the present inventors reached theseveral aspects of the invention described below.

A method of manufacturing a semiconductor device according to one aspectof the present invention characteristically comprises a step for formingon a semiconductor substrate having a first conductivity type a gateinsulating film which comprises a material having a dielectric constanthigher than that of silicon oxide film; a step for forming a gateelectrode on the gate insulating film; a step for introducing nitrogeninto the surface of the semiconductor substrate and the gate electrode;and a step for forming a pair of impurity layers having the oppositeconductivity type from the first conductivity type, which are formed inthe semiconductor substrate so as to fall on both sides of the gateelectrode.

In the present invention, formation of the gate insulating film and gateelectrode is followed by introduction of nitrogen into the surfaces ofthe semiconductor substrate and gate electrode, so that the areasintroduced with nitrogen are successfully prevented from being oxidizedeven the resist film is formed and then removed thereon. The presentinvention is also advantageous in that the annealing is carried out insuch a state that the surfaces of the semiconductor substrate and gateelectrode are introduced with nitrogen, which successfully preventsoutward diffusion of impurities already contained therein.

The present invention is thus successful in preventing depletion of thechannel, which has been a problem in the conventional process, and as aconsequence in obtaining a semiconductor device having excellentcharacteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features will be better understood from theexemplary embodiments described below, taken together with the drawings,of which:

FIGS. 1A through 1C are schematic sectional views serially showingprocess steps of a method of manufacturing a semiconductor deviceaccording to a first embodiment of the present invention;

FIGS. 2A through 2C are schematic sectional views, as continued fromFIG. 1C, serially showing process steps of the method of manufacturingthe semiconductor device according to the first embodiment of thepresent invention;

FIGS. 3A through 3C are schematic sectional views, as continued fromFIG. 2C, serially showing process steps of the method of manufacturingthe semiconductor device according to the first embodiment of thepresent invention;

FIGS. 4A through 4C are schematic sectional views, as continued fromFIG. 3C, serially showing process steps of the method of manufacturingthe semiconductor device according to the first embodiment of thepresent invention;

FIGS. 5A through 5C are schematic sectional views, as continued fromFIG. 4C, serially showing process steps of the method of manufacturingthe semiconductor device according to the first embodiment of thepresent invention;

FIGS. 6A through 6C are schematic sectional views serially showingprocess steps of a method of manufacturing a semiconductor deviceaccording to a second embodiment of the present invention;

FIG. 7 is a schematic sectional view showing a CMOS transistormanufactured by the second embodiment of the present invention;

FIGS. 8A through 8C are schematic sectional views serially showingprocess steps of a method of manufacturing a semiconductor deviceaccording to a third embodiment of the present invention;

FIGS. 9A through 9C are schematic sectional views, as continued fromFIG. 8C, serially showing process steps of the method of manufacturingthe semiconductor device according to the third embodiment of thepresent invention;

FIG. 10 is a schematic sectional view showing a CMOS transistormanufactured by the third embodiment of the present invention;

FIG. 11 is a schematic sectional view showing a CMOS transistormanufactured by a fourth embodiment of the present invention;

FIGS. 12A through 12C are schematic sectional views serially showingprocess steps of a method of manufacturing a semiconductor deviceaccording to a fifth embodiment of the present invention;

FIG. 13 is a schematic sectional view showing a CMOS transistormanufactured by the fifth embodiment of the present invention;

FIG. 14 is a graph showing relation between the thickness of the nitridefilm and resistivity of the extension layer (extension resistivity);

FIGS. 15A through 15C are schematic sectional views serially showingprocess steps of a conventional method of manufacturing a semiconductordevice;

FIGS. 16A through 16C are schematic sectional views, as continued fromFIG. 15C, serially showing process steps of the conventional method ofmanufacturing the semiconductor device; and

FIGS. 17A and 17B are schematic sectional views, as continued from FIG.16C, serially showing process steps of the conventional method ofmanufacturing the semiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The semiconductor device and the method of manufacturing thereofaccording to embodiments of the present invention will specifically bedescribed below. FIGS. 1A through 5C are schematic sectional viewsserially showing the process steps of the method of manufacturing asemiconductor device according to the first embodiment of the presentinvention.

In the first embodiment, an element isolation region 4 is formed in thesurficial portion of a P-type semiconductor substrate 1 as shown in FIG.1A, and wells are then formed in the device forming areas partitioned bythe element isolation region 4, where a P-well (channel) 2 is formed inan N-channel MOS (NMOS) area, and an N-well (channel) 3 is formed in aP-channel MOS (PMOS) area.

Next as shown in FIG. 1B, an insulating film and a polysilicon film areformed on the semiconductor substrate 1, and then patterned to therebyform gate insulating films 5 and gate electrodes 6, respectively, in thedevice forming areas. The gate insulating film 5 is preferably composedof a silicon oxinitride film, where a silicon oxide film is alsoallowable.

Next as shown in FIG. 1C, a silicon nitride film (nitrogen-introducedlayer) 7 having a thickness of 3 nm or less is formed on the surface ofa P-well 2 and N-well 3, and on the upper and side surfaces of a gateelectrode 6. The silicon nitride film 7 can be formed typically byexposing the surfaces of the P-well 2 and N-well 3, and the upper andside surfaces of the gate electrode 6 to a nitrogen-gas-containingplasma using a magnetron RIE apparatus. Typical conditions for theexposure involves a gas pressure of 10 mTorr (approx. 1.33×10⁻¹ Pa), anRF power of 100 W, an N₂ flow rate of 50 sccm, a process time of 2seconds, and a process temperature of 15° C. It is also allowable toform the silicon nitride film 7 by exposing the surfaces of the P-well 2and N-well 3, and the upper and side surfaces of the gate electrode 6 toa plasma of a mixed gas of nitrogen and argon using a magnetron RIEapparatus. Still another method of forming the silicon nitride film 7can be such that exposing the surfaces of the P-well 2 and N-well 3, andthe upper and side surfaces of the gate electrode 6 to radicalsgenerated from a nitrogen-containing gas (e.g., a mixed gas of nitrogenand helium) using a remote-plasma apparatus. Typical conditions for theexposure involves a process temperature of 550 to 800° C., a processtime of 30 to 60 seconds, a power of 3 kW, and a mixing ratio ofnitrogen and helium of 10:90 in percentage by volume.

Next as shown in FIG. 2A, a silicon oxide film 8 a and a silicon nitridefilm 8 b are successively formed over the entire surface.

Next as shown in FIG. 2B, the silicon nitride film 8 b isanisotropically etched to thereby leave the film only on the sideportions of the gate electrode 6.

The silicon oxide film 8 a is then subjected to wet processing. Theprocess results in removal of the lower end portions of the stacked filmwhich is composed of the silicon oxide film 8 a and silicon nitride film8 b, to thereby form notches 8 thereat as shown in FIG. 2C.

Next as shown in FIG. 3A, a resist film 21 is formed on thesemiconductor substrate 1 so as to cover the PMOS area and to expose theNMOS area. Using the resist film 21 and gate electrode 6 together as amask, P-type impurities, which are typically indium and boron, areion-implanted to thereby form P-type pocket layers 9 in the surficialportions of the P-well 2. The ion implantation is typically carried outby inclined ion implantation from four directions orthogonal to eachother in a plan view. As for the ion implantation of indium, animplantation energy is typically set to 60 to 90 keV and an amount ofdose is set to 5×10¹² to 1.1×10¹³ cm⁻². As for the ion implantation ofboron, an implantation energy is typically set to 8 to 12 keV and anamount of dose is set to 2×10¹² to 7×10¹² cm⁻². The resist film 21 isremoved after the ion implantation, and then annealing is carried out soas to activate the implanted impurities. It is also allowable to carryout the annealing by spike annealing under an N₂ atmosphere at 950 to1,050° C. The removal of the resist film 21 can be accomplished byashing or wet processing. Typical conditions for the ashing relate touse of a down-flow apparatus, an O₂ flow rate of 1,000 sccm, a CF₄ flowrate of 10 sccm, a flow rate of a forcing gas of 600 sccm, and a processtemperature of 250° C. The wet processing can typically be accomplishedby using a sulfuric acid-hydrogen peroxide mixed solution. Any otherresist films described hereinafter can be removed in a similar manner.

Then as shown in FIG. 3B, a resist film 22 is formed on thesemiconductor substrate 1 so as to cover the NMOS area and to expose thePMOS area. Using the resist film 22 and gate electrode 6 together as amask, an N-type impurity, which is typically antimony, is ion-implantedto thereby form N-type pocket layers 10 in the surficial portions of theN-well 3. The ion implantation is typically carried out by inclined ionimplantation from four directions orthogonal to each other in a planview, where an implantation energy is typically set to 50 to 70 keV andan amount of dose is set to 1.0×10¹³ to 1.5×10¹³ cm⁻². The resist film22 is removed after the ion implantation.

Next as shown in FIG. 3C, a resist film 23 is formed on thesemiconductor substrate 1 so as to cover the PMOS area and to expose theNMOS area. Using the resist film 23, gate electrode 6, silicon oxidefilm 8 a and silicon nitride film 8 b together as a mask, an N-typeimpurity, which is typically arsenic, is ion-implanted to thereby formN-type extension layers 11 in the surficial portions of the pocketlayers 9. The ion implantation is effected typically from the directionnormal to the surface of the semiconductor substrate 1, where animplantation energy is typically set to 2 to 4 keV and an amount of doseis set to 1.0×10¹⁵ to 1.5×10¹⁵ cm⁻². The resist film 23 is removed afterthe ion implantation, and then annealing is carried out so as toactivate the implanted impurity. It is also allowable to carry out theannealing by spike annealing under an N₂ atmosphere at 950 to 1,050° C.

Next as shown in FIG. 4A, a resist film 24 is formed on thesemiconductor substrate 1 so as to cover the NMOS area and to expose thePMOS area. Using the resist film 24, gate electrode 6, silicon oxidefilm 8 a and silicon nitride film 8 b together as a mask, a P-typeimpurity, which is typically boron, is ion-implanted to thereby formP-type extension layers 12 in the surficial portions of the pocketlayers 10. The ion implantation is effected typically from the directionnormal to the surface of the semiconductor substrate 1, where animplantation energy is typically set to 0.2 to 0.4 keV and an amount ofdose is set to 1.0×10¹⁵ to 1.5×10¹⁵ cm⁻². The resist film 24 is removedafter the ion implantation.

An insulating film, which is typically a silicon oxide film, is formedover the entire surface, and the film is then anisotropically etched soas to leave a portion of such film only on the side portions of the gateelectrodes 6, to thereby form side walls 13 as shown in FIG. 4B. Thesilicon oxide film 8 a and silicon nitride film 8 b are buried forexample in the side walls 13.

Next as shown in FIG. 4C, a resist film 25 is formed on thesemiconductor substrate 1 so as to cover the PMOS area and to expose theNMOS area. Using the resist film 25, gate electrode 6 and side walls 13together as a mask, an N-type impurity, which is typically phosphorus,is ion-implanted at a high concentration to thereby form deep N-typesource/drain diffusion regions 14 in the surficial portion of the P-well2. The ion implantation is carried out typically from the directionnormal to the surface of the semiconductor substrate 1, where animplantation energy is set to 5 to 9 keV and an amount of dose is set to5×10¹⁵ to 8×10¹⁵ cm⁻². The resist film 25 is removed after the ionimplantation.

Next as shown in FIG. 5A, a resist film 26 is formed on thesemiconductor substrate 1 so as to cover the NMOS area and to expose thePMOS area. Using the resist film 26, gate electrode 6 and side walls 13together as a mask, a P-type impurity, which is typically boron, ision-implanted at a high concentration to thereby form deep P-typesource/drain diffusion regions 15 in the surficial portion of the N-well3. The ion implantation is carried out typically from the directionnormal to the surface of the semiconductor substrate 1, where animplantation energy is typically set to 2 to 5 keV and an amount of doseis set to 3×10¹⁵ to 5×10¹⁵ cm⁻². The resist film 26 is removed after theion implantation, and then annealing is carried out so as to activatethe implanted impurity. It is also allowable to carry out the annealingby spike annealing under an N₂ atmosphere at 1,025 to 1,070° C.

Then as shown in FIG. 5B, an exposed portion of the silicon nitride film7 is removed, and a silicide layer 16, which is typically a cobaltsilicide layer, is formed on the gate electrode 6 and source/draindiffusion layers 14, 15.

The process then advances to formation of an interlayer insulating film17, formation of contact holes 18 which penetrate the interlayerinsulating film 17 to reach the source/drain diffusion regions 14, 15,filling of the contact holes 18 with a conductive material 19, andformation of a wiring, which completes a CMOS transistor.

The semiconductor device thus manufactured has a constitution shown inFIG. 5C.

According to the first embodiment of the present invention, the siliconnitride layer 7 is formed at least on the side surfaces of the gateelectrode 6 and on the surfaces of the P-well 2 and N-well 3 after theprocess step for forming the gate electrode 6 (FIG. 1B) and before theprocess step for annealing for activation of the impurities in thesource/drain diffusion regions 14, 15, so that the outward diffusion ofthe impurities in the channel, and the outward diffusion of theimpurities in the source/drain diffusion regions 14, 15 can successfullybe suppressed even when the annealing is carried out. This is successfulin suppressing depletion which has been a problem in the previousprocess.

While the foregoing process includes the steps for forming and removingthe resist films each time the pocket layers, extension layers andsource/drain diffusion layers are formed, the surfaces of the P-well 2and N-well 3 (surface of the semiconductor substrate 1) are preventedfrom being oxidized during ashing or wet processing for removing theresist films since the silicon nitride film 7 is formed at least on thesurface of the P-well 2 and N-well 3. This successfully preventsdecrease in the impurities and changes in the concentration and profile.The extension layers is not deepened, which is advantageous in thatensuring shallow junction.

Another advantage resides in that the pocket layers are formed by theion implantation effected from a direction inclined away from thesurface of the semiconductor substrate 1 after the notches are formed 8,and that the extension layers are formed by the ion implantationeffected from the direction normal to the surface of the semiconductorsubstrate 1, so that overlap in the plan view of the extension layerswith the gate electrode can be suppressed to a narrow level whileensuring a wide overlap of the pocket layers with the gate electrode.

Next paragraphs will deal with the second embodiment of the presentinvention. In the second embodiment, a double sidewall structure isapplied to a CMOS transistor. FIGS. 6A through 6C are schematicsectional views serially showing process steps of a method ofmanufacturing a semiconductor device according to the second embodimentof the present invention, and FIG. 7 is a schematic sectional viewshowing a CMOS transistor manufactured by the second embodiment of thepresent invention.

In the second embodiment, the process steps from formation of theelement isolation region 4 (FIG. 1A) to formation of the silicon nitridelayer 7 (FIG. 1C) are carried out similarly to those in the firstembodiment.

Next as shown in FIG. 6A, a silicon oxide film 31 is formed over theentire surface.

Next as shown in FIG. 6B, the silicon oxide film 31 is anisotropicallyetched so as to leave a portion thereof only on the side portions of thegate electrodes 6.

The process steps from formation of the resist film 21 (FIG. 3A) toformation of the extension layers 12 (FIG. 4A) are then carried outsimilarly to those in the first embodiment.

An insulating film, which is typically a silicon oxide film, is thenformed on the entire surface, and the film is then anisotropicallyetched so as to leave a portion thereof only on the side portions of thegate electrodes 6, to thereby form side walls 13 as shown in FIG. 6C.The silicon oxide film 31 is covered for example with the side walls 13.

The process steps from formation of the resist film 25 (FIG. 4C) andthereafter are then carried out similarly to those in the firstembodiment, which completes a CMOS transistor shown in FIG. 7.

The effects of preventing outward diffusion and oxidation of thesemiconductor substrate 1 during the removal of the resist films can beobtained also in the second embodiment similarly to the firstembodiment.

Next paragraphs will deal with the third embodiment of the presentinvention. In the third embodiment, a structure having a notched gateelectrode is applied to a CMOS transistor. FIGS. 8A through 9C areschematic sectional views serially showing process steps of a method ofmanufacturing a semiconductor device according to the third embodimentof the present invention, and FIG. 10 is a schematic sectional viewshowing a CMOS transistor manufactured by the third embodiment of thepresent invention.

In the third embodiment, the element isolation region 4, P-well 2 andN-well 3 are formed (FIG. 1A) similarly to the first embodiment.

Next as shown in FIG. 8A, an insulating film 32 and a polysilicon film33 are formed on the semiconductor substrate 1, and further on thepolysilicon film 33 in the device forming areas, resist films 27 areformed so as to cover the areas where the gate electrodes are to beformed.

Next using the resist films 27 as a mask and using a gas containing HBrand O₂, the upper portion of the polysilicon film 33 is etched. Theetching is carried out under a condition which allows the depositionalmatter generated in the etching to readily adhere on the side planes ofthe upper portion of the polysilicon film 33 which emerge as the etchingproceeds. When the etching completes, a deposit 34 remains as shown inFIG. 8B.

The lower portion of the polysilicon film 33 is then etched using theresist film 27 as a mask. The etching is carried out under a conditionwhich makes it difficult for the depositional matter generated in theetching to adhere on the side planes of the lower portion of thepolysilicon film 33 which emerge as the etching proceeds. When theetching completes, a deposit 34 remains on the upper side planes of theetched polysilicon film 33 and side planes of the resist film 27.

The polysilicon film 33 is then isotropically etched using the resistfilm 27 as a mask. In the isotropic etching, the upper portion of thepolysilicon film 33 is hardly removed by virtue of protection by thethick deposit 34, but the etching of the lower portion of thepolysilicon film 33 can proceed since the portion has only a slightamount of deposit 34 adhered thereon which can readily be removed. Whenthe etching completes, tapered notches 35 are formed along the edges ofthe gate insulating film 5 and the bottom ends of the gate electrode 6as shown in FIG. 9A. The gate electrode 6 thus obtained comprises theresidual portion of the polysilicon film 33 and deposit 34.

Next a silicon nitride film 7 having a thickness of 3 nm or less isformed on the surface of the P-well 2 and N-well 3, on the upper andside surfaces of the gate electrode 6, and on the side surfaces of thenotches 35 as shown in FIG. 9B. The silicon nitride film 7 can be formedsimilarly to the first embodiment.

The process steps from formation of the resist film 21 (FIG. 3A) toformation of the extension layers 12 (FIG. 4A) are carried out similarlyto those in the first embodiment.

An insulating film, which is typically a silicon oxide film, is formedover the entire surface, and the film is then anisotropically etched soas to leave a portion thereof only on the side portions of the gateelectrodes 6, to thereby form side walls 13 as shown in FIG. 9C.

The process steps from formation of the resist film 25 (FIG. 4C) andthereafter are carried out similarly to those in the first embodiment,which completes a CMOS transistor shown in FIG. 10.

The effects of preventing outward diffusion and oxidation of thesemiconductor substrate 1 during the removal of the resist films can beobtained also in the third embodiment similarly to the first embodiment.

Next paragraphs will deal with the fourth embodiment of the presentinvention. In the fourth embodiment, a so-called, single-drain structureis applied to a CMOS transistor. FIG. 11 is a schematic sectional viewshowing a CMOS transistor manufactured by the fourth embodiment of thepresent invention.

The CMOS transistor shown in FIG. 11 has neither the pocket layers norextension layers in any of the source/drain regions of the N-channeltransistor and P-channel transistor, unlike the CMOS transistorpreviously shown in FIG. 5C. Also the side walls 13 are not formed.

The CMOS transistor having such constitution can be manufactured by theprocess steps previously shown in FIGS. 1A through FIG. 5C, except thatthe process steps for forming the pocket layers or extension layers, andassociate process steps for forming and removing the masks are omitted.It is to be noted now that the process step for forming the siliconnitride layer 7 shown in FIG. 1C is, of course, an indispensable step.

The effects of preventing outward diffusion and oxidation of thesemiconductor substrate 1 during the removal of the resist films can beobtained also in the fourth embodiment similarly to the firstembodiment.

Next paragraphs will deal with the fifth embodiment of the presentinvention. In the fifth embodiment, a structure having neither notches 8nor notches 32 is applied to a CMOS transistor. FIGS. 12A through 12Care schematic sectional views serially showing process steps of a methodof manufacturing a semiconductor device according to the fifthembodiment of the present invention, and FIG. 13 is a schematicsectional view showing a CMOS transistor manufactured by the fifthembodiment of the present invention.

In the fifth embodiment, the process steps from formation of the elementisolation region 4 (FIG. 1A) to formation of the silicon nitride film 7(FIG. 1C) are carried out similarly to those in the first embodiment.

Next as shown in FIG. 12A, the resist film 21 is formed while omittingthe preceding steps shown in FIGS. 2A through 2C. Using the resist film21 and gate electrode 6 together as a mask, the P-type pocket layers 9and N-type extension layers 11 are formed.

Next as shown in FIG. 12B, the resist film 21 is removed, and then theresist film 22 is formed. Using the resist film 22 and gate electrode 6together as a mask, the N-type pocket layers 10 and P-type extensionlayers 12 are formed.

The resist film 22 is then removed, and the process steps from formationof the side walls 13 (FIG. 4B) and thereafter are carried out similarlyto those in the first embodiment, which completes a CMOS transistorshown in FIG. 13.

The effects of preventing outward diffusion and oxidation of thesemiconductor substrate 1 during the removal of the resist films can beobtained also in the fifth embodiment similarly to the first embodiment.

In the present invention, the thickness of the nitride film ispreferably 3 nm or less, and more preferably 2 nm or less. FIG. 14 is agraph showing relation between the thickness of the nitride film andresistivity of the extension layer (extension resistivity). As is clearfrom FIG. 14, the nitride film having a proper thickness can lower theresistivity of the extension layer, but too large thickness thereoftends to undesirably raise the resistivity of the extension layer. Thenitride film has thus preferably has a thickness of 3 nm or less.

The CMOS transistors explained in the foregoing embodiments areapplicable to inverter or so. It is to be noted now that thesemiconductor device according to the present invention is by no meanslimited to those applied to the CMOS transistors.

While the ion implantation in the foregoing embodiments are carried outusing the resist films as a mask, the present invention is also validfor the case where a stencil mask is used. The reason why resides inthat it is no more necessary to carry out a step for removing the resistfilm for the case where the stencil mask is used, but the conventionalmethod suffers from probability of depletion of the channel during theannealing.

1. A method of manufacturing a semiconductor device comprising the stepsof: forming, on a semiconductor substrate having a first conductivitytype, a gate insulating film which comprises a material having adielectric constant higher than that of a silicon oxide film; forming agate electrode on said gate insulating film; introducing nitrogen intothe surfaces of said semiconductor substrate and said gate electrode,thereby forming a silicon nitride layer; and forming a pair of impuritylayers through said silicon nitride layer, said impurity layers havingthe opposite conductivity type from said first conductivity type, whichare formed in said semiconductor substrate to fall on both sides of thegate electrode further comprising a step, which comes next to said stepfor introducing nitrogen, for forming side walls on the side surfaces ofsaid gate electrode while placing a nitrogen-containing layer formed insaid step for introducing nitrogen in between; wherein said sidewallsare etched to form a notch along the side of said gate electrode.
 2. Themethod of manufacturing a semiconductor device according to claim 1,wherein said step for introducing nitrogen further comprises a sub-stepfor exposing a target area to be introduced with nitrogen to anitrogen-containing gas plasma or radical.
 3. The method ofmanufacturing a semiconductor device according to claim 1, furthercomprising a step, which comes next to said step for introducingnitrogen, for forming a pair of first-conductivity-type impurity layersin said semiconductor substrate to fall on both sides of the gateelectrode.
 4. The method of manufacturing a semiconductor deviceaccording to claim 1, wherein a thickness of the nitrogen-containinglayer formed in said step for introducing nitrogen is 3 nm or less. 5.The method of manufacturing a semiconductor device according to claim 1,wherein said gate insulating film is comprised of a silicon oxynitridefilm.
 6. The method of manufacturing a semiconductor device according toclaim 1, further comprising a step for forming a silicide layer on thesurface of said impurity layer.
 7. A method of manufacturing asemiconductor device comprising the steps of: forming afirst-conductivity-type region and an opposite-conductivity-type regionhaving a conductivity opposite from said first conductivity type in asemiconductor substrate having a first conductivity type; forming onsaid first-conductivity-type region a first gate insulating film whichcomprises a material having a dielectric constant larger than that of asilicon oxide film; forming on said opposite-conductivity-type region asecond gate insulating film; forming a first gate electrode on saidfirst gate insulating film; forming a second gate electrode on saidsecond gate insulating film; introducing nitrogen into the surface ofsaid first and second gate electrodes, thereby forming a silicon nitridelayer; forming a first mask layer selectively covering saidopposite-conductivity-type region; forming a pair of impurity layersthrough said silicon nitride layer, said impurity layers having theopposite conductivity type in said semiconductor substrate to fall onboth sides of said first gate electrode while using said first gateelectrode and said first mask layer together as a mask; removing saidfirst mask layer; forming a second mask layer selectively covering saidfirst-conductivity-type region; forming a pair of impurity layersthrough said silicon nitride layer, said impurity layers having thefirst conductivity type in said semiconductor substrate to fall on bothsides of said second gate electrode while using said second gateelectrode and said second mask layer together as a mask; and removingsaid second mask layer further comprising a step, which comes next tosaid step for introducing nitrogen, for forming side walls on the sidesurfaces of said first and second gate electrodes while placing anitrogen-containing layer formed in said step for introducing nitrogenin between; wherein said sidewalls are etched to form a notch along theside of said gate electrode.
 8. The method of manufacturing asemiconductor device according to claim 7, wherein said step forintroducing nitrogen further comprises a sub-step for exposing a targetarea to be introduced with nitrogen to a nitrogen-containing gas plasmaor radical.
 9. The method of manufacturing a semiconductor deviceaccording to claim 7, further comprising steps, which come next to saidstep for introducing nitrogen, for forming a pair of said impuritylayers having said first-conductivity-type in said semiconductorsubstrate to fall on both sides of said first gate electrode, and forforming a pair of said impurity layers having theopposite-conductivity-type in said semiconductor substrate to fall onboth sides of said second gate electrode.
 10. The method ofmanufacturing a semiconductor device according to claim 7, wherein athickness of the nitrogen-containing layer formed in said step forintroducing nitrogen is 3 nm or less.
 11. The method of manufacturing asemiconductor device according to claim 7, wherein said first and secondgate insulating films are comprised of a silicon oxynitride film. 12.The method of manufacturing a semiconductor device according to claim 7,further comprising a step for forming silicide layers on the surfaces ofsaid pair of impurity layers having the first-conductivity-type and saidpair of impurity layers having the opposite-conductivity-type.
 13. Amethod for manufacturing a semiconductor device comprising the steps of:forming a gate insulating film on a semiconductor substrate having afirst conductivity type; forming a gate electrode on said gateinsulating film; introducing nitrogen into the surface of saidsemiconductor substrate and said gate electrode by exposing them to anitrogen-containing gas plasma or radical, thereby forming a siliconnitride layer; and forming a pair of impurity layers through saidsilicon nitride layer, said impurity layers having the oppositeconductivity from said first conductivity type in said substrate to fallon both sides of said gate electrode further comprising a step, whichcomes next to said step for introducing nitrogen, for forming side wallson the side surfaces of said gate electrode while placing anitrogen-containing layer formed in said step for introducing nitrogenin between; wherein said sidewalls are etched to form a notch along theside of said gate electrode.
 14. The method of manufacturing asemiconductor device according to claim 13, further comprising a step,which comes next to said step for introducing nitrogen, for forming apair of first-conductivity-type impurity layers in said semiconductorsubstrate to fall on both sides of the gate electrode.
 15. The method ofmanufacturing a semiconductor device according to claim 13, wherein athickness of the nitrogen-containing layer formed in said step forintroducing nitrogen is 3 nm or less.
 16. The method of manufacturing asemiconductor device according to claim 13, wherein said gate insulatingfilm is comprised of a silicon oxinitride film.
 17. The method ofmanufacturing a semiconductor device according to claim 13, furthercomprising a step for forming a silicide layer on the surface of saidimpurity layer.